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WFF7N65S 650V Super-Junction Power MOSFET

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Description

WFF7N65S 650V Super-Junction Power MOSFET .
Power MOSFET is fabricated using advanced super junction technology.

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Datasheet Specifications

Part number
WFF7N65S
Manufacturer
Winsemi
File Size
313.18 KB
Datasheet
WFF7N65S-Winsemi.pdf
Description
650V Super-Junction Power MOSFET

Features

* Ultra low Rdson
* Ultra low gate charge (typ. Qg =19nC)
* 100% UIS tested

Applications

* which require superior power density and outstanding efficiency. D G S Absolute Maximum Ratings Symbol Parameter VDSS ID Drain Source Voltage Continuous Drain Current (Tc=25℃) (Tc=100℃) IDM Drain Current Pulsed 1) VGS Gate to Source Voltage EAS Single Pulse Avalanche Energy 2) IAR Single Puls

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