SFTN0825R Datasheet - Winning Team

SFTN0825R N-Channel MOSFET

SFTN0825R N-Channel Enhancement Mode MOSFET Drain Gate Source 1.Gate 2.Drain 3.Source TO-252 Plastic Package Absolute Maximum Ratings Parameter Symbol Value Unit Drain-Source Voltage VDS 250 V Gate-Source Voltage VGS ±30 V Drain Current TC = 25℃ TC = 100℃ ID 8 5 A Peak Drain Current Avalanche energy,single pulse 1) IDM 16 A EAS 132 mJ Avalanche current, single pulse 2) IAS 2.1 A Power Dissipation TC = 25℃ PD 78 W Operating Junction and Storage Temperature Range.

SFTN0825R Datasheet (226.84 KB)