WMBT3906 Datasheet (Wing Shing Computer Components) - PNP EPITAXIAL SILICON TRANSISTORS

WMBT3906, PNP EPITAXIAL SILICON TRANSISTORS

PNP EPITAXIAL SILICON TRANSISTORS High Voltage Transistor SOT 23 WMBT3906 ! ! Power Dissipation: 225mW Collector Current: Max.

0.2A 1.

BASE 2.

EMITTER 3.

COLLECTOR GUARANTEED PROBED CHARACTERISTICS (TA=25℃) Limits Characteristic Symbol Test Conditions Units MIN.

40 40 5.0 50 60 80 100 60 30 650 MAX.

Collector-emitter Breakdown Voltage Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current BVCEO BVCBO BVEBO ICEX hFE1 hFE2 hFE3 hFE4 hFE5 BVE