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D716 - 2SD716

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SILICON EPITAXIAL PLANAR TRANSISTOR Silicon NPN high frequency, high power transistors in a plastic envelope, primarily for use in audio and general purpose www.DataSheet4U.com QUICK REFERENCE DATA SYMBOL TO-3P(I)D CONDITIONS VBE = 0V MIN VCESM VCEO IC ICM Ptot VCEsat VF tf PARAMETER Collecto

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Part number D716
Manufacturer Wing Shing Computer Components
File Size 120.48 KB
Description 2SD716
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    2SD716 GENERAL DESCRIPTION SILICON EPITAXIAL PLANAR TRANSISTOR Silicon NPN high frequency, high power transistors in a plastic envelope, primarily for use in audio and general purpose www.DataSheet4U.com QUICK REFERENCE DATA SYMBOL TO-3P(I)D CONDITIONS VBE = 0V MIN VCESM VCEO IC ICM Ptot VCEsat VF tf PARAMETER Collector-emitter voltage peak value Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Total power dissipation Collector-emitter saturation voltage Diode forward voltage Fall time Tmb 25 IC = 3.0A; IB = 0.3A IF = 3.0A 1.5 MAX 100 100 6 60 2 2.
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