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WPMD2075 - MOSFET

Description

The WPMD2075 is the Dual P-Channel logic mode power field effect transistors are produced using high cell density, DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance.

Features

  • Pin configuration (Top view).
  • Trench Technology.
  • Supper high density cell design.
  • Excellent ON resistance for higher DC current.
  • Extremely Low Threshold Voltage.
  • SOT-23-6L package design.

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Datasheet Details

Part number WPMD2075
Manufacturer WillSEMI
File Size 578.94 KB
Description MOSFET
Datasheet download datasheet WPMD2075 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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WPMD2075 Dual P-Channel, -20V, -3.6A, Power MOSFET VDS (V) -20 Typical Rds(on) (mΩ) 60@ VGS=-10V 70@ VGS=-4.5V 100@ VGS=-2.5V WPMD2075 Http://www.sh-willsemi.com Descriptions The WPMD2075 is the Dual P-Channel logic mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application, notebook computer power management and other battery powered circuits where high-side switching. .
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