WPM2009D Datasheet (WillSEMI)

WPM2009D, P-MOSFET

This single P-Channel MOSFET is produced using trench process that provides minimum on resistance performance.

WPM2009D is enhancement power MOSFET with 2.0W power dissipation mounting 1 in2 pad in a DFN3x3 package.

This device is suited for high power charging circuit of mobile phone application.

WPM2009D Features

* z Max Rds(on) 42m @ Vgs=-4.5V z Max Vds -20V z Max Current -4.0A z Typical Vgs(th) -0.65V @ Id=-250uA z Power Dissipation 2.0W (Note2) z High performance Trench process z DFN3x3-8L Package z Pb-Free Applications z Battery charging z Load Switch z Power Switch z DC-DC converter Pin Conne