Description
Rds(on) (Ω) 0.016@ VGS=4.5V 0.019@ VGS=3.1V 0.022@ VGS=2.5V
The WNMD2162 is Dual N-Channel enhancement MOS Field Effect Transistor.Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge.This device is suitable for use in DC-DC conversion, power switch and charging circuit.Standard Product WNMD2162 is Pb-free and Halogenfree .Http//:www.willsemi.com
PDFN2.9×2.8-8L
D2 D2 87
D1 6
D1 5
Features
- Trench Technology.
- Supper high density cell design.
- Excellent ON resistance for higher DC current.
- Extremely Low Threshold Voltage.
- Small package PDFN2.9×2.8-8L.
WNMD2162 Datasheet
