Datasheet Details
| Part number | W3E64M72S-XBX |
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| Manufacturer | White Electronic |
| File Size | 700.18 KB |
| Description | 64Mx72 DDR SDRAM |
| Datasheet |
 W3E64M72S-XBX Datasheet
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General Description
The 512MByte (4Gb) DDR SDRAM is a high-speed CMOS, dynamic random-access, memory using 9 chips containing 536,870,912 bits.
Each chip is internally configured as a quad-bank DRAM.
The 512MB DDR SDRAM uses a double data rate ar chi tec ture to achieve high-speed operation.
Key Features
- Data rate = 200, 250, 266 and 333Mbs Package:.
- 219 Plastic Ball Grid Array (PBGA), 25 x 32mm 2.5V ±0.2V core power supply 2.5V I/O (SSTL_2 compatible) Differential clock inputs (CK and CK#) Commands entered on each positive CK edge Internal pipelined double-data-rate (DDR) architecture; two data accesses per clock cycle Programmable Burst length: 2,4 or 8 Bidirectional data strobe (DQS) transmitted/ received with data, i. e. , source-synchronous data capture (one per byte) DQS edge-aligne.