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WTC2306 - Enhancement Mode Power MOSFET

Features

  • Super High Dense Cell Design For Low RDS(on) RDS(on) < 38mΩ @ VGS = 10V.
  • Rugged and Reliable.
  • Simple Drive Requirement.
  • SOT-23 Package 3 1 2.

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Datasheet preview – WTC2306

Datasheet Details

Part number WTC2306
Manufacturer Weitron Technology
File Size 779.58 KB
Description Enhancement Mode Power MOSFET
Datasheet download datasheet WTC2306 Datasheet
Additional preview pages of the WTC2306 datasheet.

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Other Datasheets by Weitron Technology
  • WTC2306 - N-Channel Enhancement Mode Power MOSFET
  • WTC2306A - Enhancement Mode Power MOSFET
  • WTC2301 - Enhancement Mode Power MOSFET
  • WTC2301 - P-Channel Enhancement Mode Power MOSFET
  • WTC2302 - Enhancement Mode Power MOSFET
  • WTC2302 - N-Channel Enhancement Mode Power MOSFET
  • WTC2303 - Enhancement Mode Power MOSFET
  • WTC2304 - Enhancement Mode Power MOSFET

Full PDF Text Transcription

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WTC2306 N-Channel Enhancement Mode Power MOSFET P b Lead(Pb)-Free 1 GATE 3 DRAIN DRAIN CURRENT 5.8 AMPERES DRAIN SOURCE VOLTAGE 30 VOLTAGE 2 SOURCE Features: * Super High Dense Cell Design For Low RDS(on) RDS(on) < 38mΩ @ VGS = 10V * Rugged and Reliable * Simple Drive Requirement * SOT-23 Package 3 1 2 Applications: * Power Management in Notebook Computer * Portable Equipment * Battery Powered System SOT-23 Maximum Ratings (TA Rating Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current1 Total Power Dissipation (TA=25°C) Maximum Junction-Ambient2 Operating Junction Temperature Range Storage Temperature Range Symbol VDS VGS ID IDM PD RθJA TJ Tstg Value 30 ±12 5.8 30 1.4 140 -55~+150 -55~+150 Unit V V A A W °C/W °C °C Note: 1.
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