Datasheet Details
| Part number | WNSC6D10650Y |
|---|---|
| Manufacturer | WeEn |
| File Size | 491.91 KB |
| Description | Silicon Carbide Diode |
| Datasheet |
 WNSC6D10650Y Datasheet
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General Description
Silicon Carbide Schottky diode in a IITO2202L plastic package, designed for high frequency switched-mode power supplies.
2.
Key Features
- New 6th Generation Technology.
- Low Forward Voltage Drop.
- Low Reverse Leakage Current.
- High Forward Surge Capability IFSM.
- Reduced Losses in Associated MOSFET.
- Reduced EMI.
- Reduced Cooling Requirements.
- RoHS Compliant.
- Insulated package rated at 2500V RMS 3.