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WNSC2M20065B7 N-Channel Silicon Carbide MOSFET

WNSC2M20065B7 Description

WNSC2M20065B7 N-Channel Silicon Carbide MOSFET Rev.01 - 12 October 2024 Product data sheet 1.General .
Silicon Carbide MOSFET in a TO263-7L plastic package, designed for high frequency, high efficiency systems.

WNSC2M20065B7 Features

* Kelvin source configuration
* Low specific on-resistance
* Optimized dynamic performance
* Robust gate design
* 0V turn-off VGS for simple gate driving
* 100% UIS Tested
* Easy to parallel

WNSC2M20065B7 Applications

* PC/server/telecom power supplies
* UPS & Energy storage system
* Battery formation instrument
* PV MPPT and inverters
* EV Charger
* Motor Drives 4. Quick reference data Table 1. Quick reference data Symbol Parameter Absolute maximum rating VDS

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Datasheet Details

Part number
WNSC2M20065B7
Manufacturer
WeEn
File Size
866.23 KB
Datasheet
WNSC2M20065B7-WeEn.pdf
Description
N-Channel Silicon Carbide MOSFET

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