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WG40N120MFW1 - IGBT

Description

WG40N120MFW1 uses advanced Fine Trench Field-stop IGBT technology with anti-parallel diode in TO-247 package.

Features

  • Maximum junction temperature 175 °C.
  • Medium switching speed.
  • Positive Temperature efficient for Easy Parallel Operating.
  • Very soft, fast recovery anti-parallel diode.
  • EMI Improved Design 3.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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WG40N120MFW1 IGBT Rev.01 - 19 June 2024 Product data sheet 1. General description WG40N120MFW1 uses advanced Fine Trench Field-stop IGBT technology with anti-parallel diode in TO-247 package. This device is part of the Medium speed series of IGBTs, which represents an optimum compromise between conduction and switching losses to maximize the efficiency of high switching frequency converter. RoHS 2. Features and benefits • Maximum junction temperature 175 °C • Medium switching speed • Positive Temperature efficient for Easy Parallel Operating • Very soft, fast recovery anti-parallel diode • EMI Improved Design 3. Applications • Solar inverter • UPS • Welding converters • PFC • Mid to high switching frequency applications halogen-Free 4. Quick reference data Table 1.
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