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WG30R135W1 - IGBT

Description

WG30R135W1 uses advanced Fine Trench Field-stop technology IGBT with monolithic body diode in TO-247 package.

This device is part of Reverse-Conducting of IGBTs, which represents an optimum compromise between conduction and switching losses to maximize the efficiency for soft commutation.

Features

  • Reverse Conducting IGBT with Monolithic Body Diode.
  • Maximum Junction Temperature 175 °C.
  • Low Conduction Losses.
  • Positive Temperature efficient for Easy Parallel Operating.
  • EMI Improved Design 3.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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WG30R135W1 IGBT Rev.01 - 23 March 2024 Product data sheet 1. General description WG30R135W1 uses advanced Fine Trench Field-stop technology IGBT with monolithic body diode in TO-247 package. This device is part of Reverse-Conducting of IGBTs, which represents an optimum compromise between conduction and switching losses to maximize the efficiency for soft commutation. RoHS halogen-Free 2. Features and benefits • Reverse Conducting IGBT with Monolithic Body Diode • Maximum Junction Temperature 175 °C • Low Conduction Losses • Positive Temperature efficient for Easy Parallel Operating • EMI Improved Design 3. Applications • Microwave ovens • Induction heating • Resonant converters • Soft switching applications 4. Quick reference data Table 1.
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