WG30N65HFB1 - IGBT

Product Overview

WeEn

Datasheet Details

Part number	WG30N65HFB1
Manufacturer	WeEn
File Size	893.01 KB
Description	IGBT
Datasheet	WG30N65HFB1 Datasheet
Additional preview pages of the WG30N65HFB1 datasheet.

Product details

Description

WG30N65HFB1 uses advanced Fine Trench Field-stop IGBT technology with antiparallel diode in TO263 package to provide extremely low VCE(sat), and excellent switching performance.

Features

Maximum junction temperature 175 °C.
Positive Temperature efficient for easy paralleling.
Very soft, fast recovery anti-parallel diode.
High switching speed.
EMI Improved Design 3.

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Published: Mar 7, 2025 |