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TK3906NND03 - Plastic-Encapsulate Transistors

Description

Low power loss, high efficiency.

PNP Epitaxial Silicon Transistor

High current capability, low forward voltage drop.

Features

  • br>.
  • High surge capability.
  • Guardring for overvoltage protection. Epitaxial Planar Die Construction.
  • Ultra high-speed switching. Complementary NPN Type Available (TK3904NND03).
  • Silicon epitaxial planar chip, metal silicon junction. Ultra-Small Surface Mount Package parts meet environmental standards of.
  • Lead-free Also Available in Lead Free Version MIL-STD-19500 /228 Halogen free product for packing code suffix "H".

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Datasheet Details

Part number TK3906NND03
Manufacturer WILLAS
File Size 409.38 KB
Description Plastic-Encapsulate Transistors
Datasheet download datasheet TK3906NND03 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
FM120-M TK39011D03 THRU WBFBP-03B Plastic-Encapsulate Transistors FM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123+ PACKAGE • Batch process design, excellent power dissipation offers TRANSISTOR better reverse leakage current and thermal resistance. • Low profile surface mounted application in order to optimize board space. DESCRIPTION Low power loss, high efficiency. • PNP Epitaxial Silicon Transistor • High current capability, low forward voltage drop. FEATURES• High surge capability. • Guardring for overvoltage protection. Epitaxial Planar Die Construction • Ultra high-speed switching. Complementary NPN Type Available (TK3904NND03) • Silicon epitaxial planar chip, metal silicon junction.
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