SE2305GD P-Channel High Density Trench MOSFET

WILLAS

SE2305GD Description

P-Channel High Density Trench MOSFET SE2305GD PRIMARY CHARACTERISTICS VDSS ID RDS(on)Max -20V -3.5A -1.2A 50mΩ@VGS=4.5V 65mΩ@VGS=2.5V SOT-23 .
The SE2305GD uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.

SE2305GD Features

* High power and current handing capability
* Lead free product is acquired
* Surface mount package
* Moisture Sensitivity Level 1 G S MECHANICAL DATA
* Case：Molded plastic,SOT-23
* Polarity：Shown above
* Terminals :Plated terminals, solderable per MIL-STD-750,Method 202

SE2305GD Applications

* ABSOLUTE MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage VDS -20 V Gate-Source Voltage VGS 12 V Drain Current-Continuousa @ TA = 25 °C b -Pulse Maximum Power Dissipationa ID IDM PD -4 -15 1.25 A A W Operating Junction and Storage T

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Datasheet Details

Part number: SE2305GD
Manufacturer: WILLAS
File Size: 919.04 KB
Datasheet: SE2305GD-WILLAS.pdf
Description: P-Channel High Density Trench MOSFET

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P-Channel High Density Trench MOSFET WILLAS

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