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PPM6N20V10 - P-Channel MOSFET

Features

  • The enhancement mode MOS is extremely high density cell and low on-resistance. Absolute maximum rating@25℃ Rating Drain-Source Voltage Gate-Source Voltage Drain Current Total Power Dissipation Continuous Pulsed TA=25℃ TA=125℃ TA=25℃ TA=70℃ Operating and Storage Junction Temperature Range WWDϲEϮϬsϭϬ DFN2.
  • 2-6L.

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Datasheet Details

Part number PPM6N20V10
Manufacturer WILLAS
File Size 527.53 KB
Description P-Channel MOSFET
Datasheet download datasheet PPM6N20V10 Datasheet

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WͲŚĂŶŶĞůůŽǁŽŶͲƌĞƐŝƐƚĂŶĐĞDK^&d PRIMARY CHARACTERISTICS VDS(V) RDS(on)(mΩ) ID(A) -20 14@VGS=-4.5V -10 FEATURES  The enhancement mode MOS is extremely high density cell and low on-resistance.
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