Datasheet Details
- Part number
- PPM6N20V10
- Manufacturer
- WILLAS
- File Size
- 527.53 KB
- Datasheet
- PPM6N20V10-WILLAS.pdf
- Description
- P-Channel MOSFET
PPM6N20V10 Description
WͲŚĂŶŶĞůůŽǁŽŶͲƌĞƐŝƐƚĂŶĐĞDK^& d PRIMARY CHARACTERISTICS VDS(V) RDS(on)(mΩ) ID(A) -20 14@VGS=-4.5V -10 .PPM6N20V10 Features
* The enhancement mode MOS is extremely high density cell and low on-resistance. Absolute maximum rating@25℃ Rating Drain-Source Voltage Gate-Source Voltage Drain Current Total Power Dissipation Continuous Pulsed TA=25℃ TA=125℃ TA=25℃ TA=70℃ Operating and Storage Junction Temperature Ran
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