Extremely thin package
.112 (2.85) .100 (2.55)
Reverse Recovery Time Power Dissipation 3.33mW/°C (25°C)
trr P
4 500
ns.
Low stored charge.
Majority carrier conduction
mW
1.02(26.0) MIN. .022(0.55) .018(0.45)
Forward Current
IF
300 mA
Junction Temp. Storage Temp. Tj -65 to 175 °C
.153(3.6)
Tstg -65 to 175 °C.
📁 1N914B Similar Datasheet
1N914BM - 500mW DO-34 Hermetically Sealed Glass Fast Switching Diodes(HIGHWAY)
1N914B-WILLAS.pdf
