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RoHS KSC2330
KSC2330 TRANSISTOR (NPN)
DFEATURE TPower dissipation
.,LPCM:
1 W (Tamb=25℃)
Collector current
ICM: 0.1 Collector-base voltage
A
OV(BR)CBO: 300
V
Operating and storage junction temperature range
CTJ, Tstg: -55℃ to +150℃
TO-92L
1. EMITTER 2. COLLECTOR 3. BASE
123
ICELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
NCollector-base breakdown voltage OCollector-emitter breakdown voltage REmitter-base breakdown voltage TCollector cut-off current CDC current gain
Collector-emitter saturation voltage
Symbol V(BR)CBO V(BR)CEO V(BR)EBO
ICBO hFE VCE(sat)
Test conditions Ic= 100µA, IE=0 IC= 5mA, IB=0 IE= 100µA, IC=0 VCB=200V, IE=0
VCE=10 V, IC= 20mA IC= 10m A, IB= 1mA
MIN MAX 300 300
7 0.1
40 240 0.
KSC2330 Datasheet
