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RoHS
2SC2216
2SC2216
FEATURES Power dissipation
TRANSISTOR (NPN) TO—92
PCM: 300 mW (Tamb=25℃) Collector current 50 mA ICM: Collector-base voltage 50 V V(BR)CBO : Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃
1. BASE
2. EMITTER
ELECTRICAL CHARACTERISTICS (Tamb=25℃
Parameter Collector-base breakdown voltage Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE
unless otherwise specified)
Test
Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain
Collector-emitter saturation voltage Bass-emitter saturation voltage Transition frequency
W
J E
E
R T C E L
VCE (sat) VBE (sat)
Ic= 10 mA , IB=0 IE= 100µA, IC=0 IE=0
O
conditions
Ic= 100µA, IE=0
N
IC
3. COLLECTOR
C
L , .
2SC2216 Datasheet
