FMMT591 Datasheet (WEITRON) - General Purpose Transistor PNP Silicon

FMMT591, General Purpose Transistor PNP Silicon

FMMT591 General Purpose Transistor PNP Silicon P b Lead(Pb)-Free Maximum Ratings Rating Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Symbol V(BR)CEO V(BR)CBO COLLECTOR 3 1 BASE 2 EMITTER Value -60 -80 3 1 2 SOT-23 Unit V V Emitter-Base Breakdown Voltage V(BR)EBO -5.0 V Collector Current Power Dissipation TA=25°C Junction Temperature Range IC -1.0 A PD 500 mW TJ +150 °C Storage Temperature Range TSTG -55 to +150 °C Device Marking FMMT591=591 Electrical