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2SD313 - NPN Silicon Epitaxial Power Transistor

Features

  • DC Current Gain hFE = 40-320 @IC = 1.0A.
  • Low VCE(sat) ≤ 1.0V(MAX) @IC = 2.0A, IB = 0.2A.
  • Complememtary to NPN 2SB507.

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Datasheet Details

Part number 2SD313
Manufacturer WEITRON
File Size 159.37 KB
Description NPN Silicon Epitaxial Power Transistor
Datasheet download datasheet 2SD313 Datasheet

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Full PDF Text Transcription

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NPN Silicon Epitaxial Power Transistor P b Lead(Pb)-Free Features: * DC Current Gain hFE = 40-320 @IC = 1.0A * Low VCE(sat) ≤ 1.0V(MAX) @IC = 2.0A, IB = 0.2A * Complememtary to NPN 2SB507 COLLECTOR 2 BASE 1 3 EMITTER ABSOLUTE MAXIMUM RATINGS (TA=25ºC) Rating Collector to Base Voltage Collector to Emitter Voltage Collector to Base Voltage Collector Current Total Device Disspation TA=25°C TC=25°C Derate above 25°C Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC PD TJ Tstg 2SD313 1 23 1. BASE 2. COLLECTOR 3. EMITTER TO-220 Value 60 60 5.0 3.0 1.75 30 0.
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