Datasheet4U Logo Datasheet4U.com

WMN09N65VD - Super Junction Power MOSFET

General Description

WMOSTM VD is Wayon’s new high voltage power MOSFET family that is utilizing advanced technology for extremely low on-resistance and low gate charge performance.

WMOSTM VD is suitable for applications which require superior power density and outstanding efficiency.

Key Features

  • VDS =700V @ Tj,max.
  • IDM =10.5A.
  • Typ. RDS(on) =1.0Ω.
  • 100% UIS tested.
  • Pb-free plating, Halogen free.

📥 Download Datasheet

Datasheet Details

Part number WMN09N65VD
Manufacturer WAYON
File Size 579.40 KB
Description Super Junction Power MOSFET
Datasheet download datasheet WMN09N65VD Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
WMN-22QR 802.11 b/g/n miniPCI module Gemicom Technology

Other Datasheets by WAYON

Part Number Description
WMN09N65C2 Super Junction Power MOSFET
WMN09N60C2 Super Junction Power MOSFET
WMN09N60VD Super Junction Power MOSFET
WMN04N60C2 Super Junction Power MOSFET
WMN07N60C2 Super Junction Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
WMK09N65VD, WML09N65VD, WMH09N65VD, WMM09N65VD WMN09N65VD, WMO09N65VD, WMP09N65VD, WMG09N65VD 650V 1.0Ω Super Junction Power MOSFET Description WMOSTM VD is Wayon’s new high voltage power MOSFET family that is utilizing advanced technology for extremely low on-resistance and low gate charge performance. WMOSTM VD is suitable for applications which require superior power density and outstanding efficiency. Features  VDS =700V @ Tj,max  IDM =10.5A  Typ. RDS(on) =1.