VT2080C Dual Trench MOS Barrier Schottky Rectifier

Vishay

Description

www.DataSheet.co.kr New Product VT2080C, VIT2080C Vishay General Semiconductor Dual Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.52 V at .

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Datasheet Specifications

Part number: VT2080C
Manufacturer: Vishay ↗
File Size: 188.27 KB
Datasheet: VT2080C_Vishay.pdf
Description: Dual Trench MOS Barrier Schottky Rectifier

Features

* Trench MOS Schottky technology
* Low forward voltage drop, low power losses
* High efficiency operation
* Solder bath temperature 275 °C max. 10 s, per JESD 22-B106
* AEC-Q101 qualified 2 VT2080C PIN 1 PIN 3 PIN 2 CASE 3 1 VIT2080C PIN 1 PIN 3 2 3 1

Applications

* For use in high frequency DC/DC converters, switching power supplies, freewheeling diodes, OR-ing diode, and reverse battery protection. PRIMARY CHARACTERISTICS IF(AV) VRRM IFSM VF at IF = 10 A TJ max. 2 x 10 A 80 V 100 A 0.60 V 150 °C MECHANICAL DATA Case: TO-220AB and TO-262AA Molding compound m

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VT2080C Dual Trench MOS Barrier Schottky Rectifier Vishay

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