VT1080S Trench MOS Barrier Schottky Rectifier

Vishay

Description

www.vishay.com VT1080S, VIT1080S Vishay General Semiconductor Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.52 V at IF = 5 A TO-220AB TMB.

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Datasheet Specifications

Part number: VT1080S
Manufacturer: Vishay ↗
File Size: 139.67 KB
Datasheet: VT1080S_Vishay.pdf
Description: Trench MOS Barrier Schottky Rectifier

Features

* Trench MOS Schottky technology
* Low forward voltage drop, low power losses
* High efficiency operation
* Solder bath temperature 275 °C max. 10 s, per JESD 22-B106
* Material categorization: for definitions of compliance please see www. vishay. com/doc?99912

Applications

* For use in high frequency DC/DC converters, switching power supplies, freewheeling diodes, OR-ing diode, and reverse battery protection. PRIMARY CHARACTERISTICS IF(AV) 10 A VRRM 80 V IFSM 100 A VF at IF = 10 A TJ max. 0.60 V 150 °C Package TO-220AB, TO-262AA Diode variation Single MECH

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VT1080S Trench MOS Barrier Schottky Rectifier Vishay

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