VIT3060G-E3 - Dual High Voltage Trench MOS Barrier Schottky Rectifier

Features

• Trench MOS Schottky technology.
• Low forward voltage drop, low power losses.
• High efficiency operation.
• Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package).
• Not recommended for PCB bottom side wave mounting.
• Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 (for TO-220AB, ITO-220AB and TO-262AA package).
• Material categorization: for.