Datasheet4U Logo Datasheet4U.com

VI30M120C - Dual High-Voltage Trench MOS Barrier Schottky Rectifier

Features

  • Trench MOS Schottky technology.
  • Low forward voltage drop, low power losses.
  • High efficiency operation.
  • Solder dip 275 °C max. 10 s, per JESD 22-B106.
  • AEC-Q101 qualified.
  • Material categorization: for definitions of compliance please see www. vishay. com/doc?99912.

📥 Download Datasheet

Datasheet Details

Part number VI30M120C
Manufacturer Vishay
File Size 139.65 KB
Description Dual High-Voltage Trench MOS Barrier Schottky Rectifier
Datasheet download datasheet VI30M120C Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
VI30120S High-Voltage Trench MOS Barrier Schottky Rectifier Vishay Siliconix
VI315-2 LCD varitronix
VI315-DP LCD varitronix
VI315-DPRC LCD ETC

Other Datasheets by Vishay

Part Number Description
VI30M120C-M3 Dual High-Voltage Trench MOS Barrier Schottky Rectifier
VI30M120CHM3 Dual High-Voltage Trench MOS Barrier Schottky Rectifier
VI30100C Dual High-Voltage Trench MOS Barrier Schottky Rectifier
VI30100C-E3 Dual High Voltage Trench MOS Barrier Schottky Rectifier
VI30100S High-Voltage Trench MOS Barrier Schottky Rectifier

Full PDF Text Transcription

Click to expand full text
www.vishay.com V30M120C, VI30M120C Vishay General Semiconductor Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.52 V at IF = 5 A TO-220AB TMBS ® TO-262AA K 3 2 1 V30M120C PIN 1 PIN 2 PIN 3 CASE 3 2 1 VI30M120C PIN 1 PIN 2 PIN 3 K PRIMARY CHARACTERISTICS IF(AV) VRRM IFSM VF at IF = 15 A TJ max. Package 2 x 15 A 120 V 150 A 0.68 V 175 °C TO-220AB, TO-262AA Diode variations Dual common cathode FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder dip 275 °C max. 10 s, per JESD 22-B106 • AEC-Q101 qualified • Material categorization: for definitions of compliance please see www.vishay.
Published: |