VI20100S-E3 - High Voltage Trench MOS Barrier Schottky Rectifier

Vishay

Datasheet Details

Part number	VI20100S-E3
Manufacturer	Vishay
File Size	200.83 KB
Description	High Voltage Trench MOS Barrier Schottky Rectifier
Datasheet	VI20100S-E3-Vishay.pdf

Trench MOS Schottky technology.
Low forward voltage drop, low power losses.
High efficiency operation.
Low thermal resistance.
Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package).
Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 (for TO-220AB, ITO-220AB, and TO-262AA package).

📁 VI20100S-E3 Similar Datasheet

Other Datasheets by Vishay

Published: Jun 4, 2019 |