VF30M120C - Dual High-Voltage Trench MOS Barrier Schottky Rectifier

Vishay

Datasheet Details

Part number	VF30M120C
Manufacturer	Vishay
File Size	672.33 KB
Description	Dual High-Voltage Trench MOS Barrier Schottky Rectifier
Datasheet	VF30M120C_Vishay.pdf

Trench MOS Schottky technology.
Low forward voltage drop, low power losses.
High efficiency operation.
Solder bath temperature 275 °C max. 10 s, per JESD 22-B106.
Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC.
Halogen-free according to IEC 61249-2-21 definition 1 VF30M120C PIN 1 PIN 3 PIN 2 2 3.

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Published: Mar 28, 2012 |