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VB20M120C-E3 - Dual High-Voltage Trench MOS Barrier Schottky Rectifier

Vishay

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Datasheet Details

Part number: VB20M120C-E3
Manufacturer: Vishay ↗
File Size: 88.34 KB
Datasheet: VB20M120C-E3-Vishay.pdf
Description: Dual High-Voltage Trench MOS Barrier Schottky Rectifier

VB20M120C-E3 Product details

Features

Trench MOS Schottky technology.
Low forward voltage drop, low power losses.
High efficiency operation.
AEC-Q101 qualified available - Automotive ordering code: base P/NHM3.
Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C.
Material categorization: for definitions of compliance please see www. vishay. com/doc?99912.

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Dual High-Voltage Trench MOS Barrier Schottky Rectifier Vishay

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