V8PAM12 Trench MOS Barrier Schottky Rectifier

Vishay

Description

www.vishay.com V8PAM12 Vishay General Semiconductor Surface-Mount TMBS® (Trench MOS Barrier Schottky) Rectifier eSMP® Series Top View Bottom View.

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Datasheet Specifications

Part number: V8PAM12
Manufacturer: Vishay ↗
File Size: 122.84 KB
Datasheet: V8PAM12-Vishay.pdf
Description: Trench MOS Barrier Schottky Rectifier

Features

* Very low profile - typical height of 0.95 mm
* Ideal for automated placement
* Trench MOS Schottky technology
* Low power losses, high efficiency
* Low forward voltage drop
* Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C
* AEC-Q

Applications

* For use in high frequency inverters, freewheeling, DC/DC converters, and polarity protection in commercial and automotive applications. PRIMARY CHARACTERISTICS IF(AV) VRRM IFSM 8.0 A 120 V 100 A VF at IF = 8.0 A (TA = 125 °C) 0.65 V TJ max. Package 175 °C SMPA (DO-221BC) Circuit configuratio

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V8PAM12 Trench MOS Barrier Schottky Rectifier Vishay

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