V6KM120DU Trench MOS Barrier Schottky Rectifier

Vishay

Description

www.vishay.com V6KM120DU Vishay General Semiconductor High Current Density Surface-Mount Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.51 V.

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Datasheet Specifications

Part number: V6KM120DU
Manufacturer: Vishay ↗
File Size: 131.20 KB
Datasheet: V6KM120DU-Vishay.pdf
Description: Trench MOS Barrier Schottky Rectifier

Features

* Trench MOS Schottky technology Available
* Low forward voltage drop, low power losses
* High efficiency operation
* Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C
* AEC-Q101 qualified available - Automotive ordering code: base P/NHM3

Applications

* For use in low voltage high frequency DC/DC converters, freewheeling diodes, and polarity protection applications. Models Available PRIMARY CHARACTERISTICS IF(AV) VRRM IFSM VF at IF = 3 A (TA = 125 °C) TJ max. Package 2x3A 120 V 80 A 0.60 V 175 °C FlatPAK 5 x 6 Circuit configuration Separated

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V6KM120DU Trench MOS Barrier Schottky Rectifier Vishay

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