V4PAN50-M3 - Surface Mount Trench MOS Barrier Schottky Rectifier

Vishay

Datasheet Details

Very low profile - typical height of 0.95 mm.
Ideal for automated placement.
Trench MOS Schottky technology.
Low power losses, high efficiency.
Low forward voltage drop.
Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C.
Material categorization: for definitions of compliance please see www. vishay. com/doc?99912.

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Published: Mar 29, 2017 |