V40DM120C-M3 Dual High Voltage Trench MOS Barrier Schottky Rectifier

Vishay

Description

www.vishay.com V40DM120C-M3, V40DM120CHM3 Vishay General Semiconductor Dual High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.46 V.

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Datasheet Specifications

Part number: V40DM120C-M3
Manufacturer: Vishay ↗
File Size: 119.15 KB
Datasheet: V40DM120C-M3-Vishay.pdf
Description: Dual High Voltage Trench MOS Barrier Schottky Rectifier

Features

* Trench MOS Schottky technology
* Very low profile - typical height of 1.7 mm
* Ideal for automated placement
* Low forward voltage drop, low power losses
* High efficiency operation
* Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C

Applications

* For use in high frequency DC/DC converters, switching power supplies, freewheeling diodes, OR-ing diode, and reverse battery protection in commercial, inductrial, and automotive application. MECHANICAL DATA Case: TO-263AC (SMPD) Molding compound meets UL 94 V-0 flammability rating Base P/N-M3 - hal

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V40DM120C-M3 Dual High Voltage Trench MOS Barrier Schottky Rectifier Vishay

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