V40DL45 Trench MOS Barrier Schottky Rectifier

Vishay

Description

www.vishay.com V40DL45 Vishay General Semiconductor Low-Voltage TMBS® (Trench MOS Barrier Schottky) Rectifier Ultra Low VF = 0.26 V at IF = 5 A eSM.

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Datasheet Specifications

Part number: V40DL45
Manufacturer: Vishay ↗
File Size: 117.10 KB
Datasheet: V40DL45-Vishay.pdf
Description: Trench MOS Barrier Schottky Rectifier

Features

* Trench MOS Schottky technology Available
* Very low profile - typical height of 1.7 mm
* Ideal for automated placement
* Low forward voltage drop, low power losses
* High efficiency operation
* Meets MSL level 1, per J-STD-020, LF maximum peak

Applications

* For use in high frequency DC/DC converters, switching power supplies, freewheeling diodes, OR-ing diode, and reverse battery protection. PRIMARY CHARACTERISTICS IF(AV) VRRM 40 A 45 V IFSM 240 A VF at IF = 40 A (TA = 125 °C) TJ max. Package 0.53 V 150 °C SMPD (TO-263AC) Circuit configuration

V40DL45 Distributors

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V40DL45 Trench MOS Barrier Schottky Rectifier Vishay

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