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V40D45C Trench MOS Barrier Schottky Rectifier

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Description

www.vishay.com V40D45C Vishay General Semiconductor Dual Low-Voltage TMBS® (Trench MOS Barrier Schottky) Rectifier Ultra Low VF = 0.29 V at IF = 5.0.

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Datasheet Specifications

Part number
V40D45C
Manufacturer
Vishay ↗
File Size
110.44 KB
Datasheet
V40D45C-Vishay.pdf
Description
Trench MOS Barrier Schottky Rectifier

Features

* Trench MOS Schottky technology Available
* Very low profile - typical height of 1.7 mm
* Ideal for automated placement
* Low forward voltage drop, low power losses
* High efficiency operation
* Meets MSL level 1, per J-STD-020, LF maximum peak

Applications

* For use in high frequency DC/DC converters, switching power supplies, freewheeling diodes, OR-ing diode, and reverse battery protection in commercial, industrial, and automotive application. PRIMARY CHARACTERISTICS IF(AV) 2 x 20 A VRRM 45 V IFSM VF at IF = 20 A (TA = 125 °C) TJ max. 250 A 0.4

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