V20PW12C - High Current Density Surface-Mount TMBS Rectifier

Vishay

V20PW12C Description

www.vishay.com V20PW12C Vishay General Semiconductor High Current Density Surface-Mount TMBS® (Trench MOS Barrier Schottky) Rectifier Ultra Low VF =.

V20PW12C Features

* Very low profile - typical height of 1.3 mm
* Trench MOS Schottky technology
* Ideal for automated placement
* Low forward voltage drop, low power losses
* High efficiency operation
* Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C

V20PW12C Applications

* For use in low voltage high frequency DC/DC converters, freewheeling diodes, and polarity protection applications. PRIMARY CHARACTERISTICS IF(AV) 20 A VRRM 120 V IFSM 150 A VF at IF = 10 A (TA = 125 °C) 0.66 V TJ max. 150 °C Package SlimDPAK (TO-252AE) Circuit configuration Common cat

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V20PW12C Datasheet Preview — Preview of V20PW12C PDF

Datasheet Details

Part number: V20PW12C
Manufacturer: Vishay ↗
File Size: 114.92 KB
Datasheet: V20PW12C-Vishay.pdf
Description: High Current Density Surface-Mount TMBS Rectifier

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High Current Density Surface-Mount TMBS Rectifier Vishay

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