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V20DM120C - Trench MOS Barrier Schottky Rectifier

Product Overview

Vishay

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V20DM120C Trench MOS Barrier Schottky Rectifier by Vishay - Datasheet Preview — Datasheet preview – V20DM120C

Datasheet Details

Part number	V20DM120C
Manufacturer	Vishay
File Size	122.77 KB
Description	Trench MOS Barrier Schottky Rectifier
Datasheet	V20DM120C Datasheet
Additional preview pages of the V20DM120C datasheet.

Product details

Features

Trench MOS Schottky technology Available.
Very low profile - typical height of 1.7 mm.
Ideal for automated placement.
Low forward voltage drop, low power losses.
High efficiency operation.
Meets MSL level 1, per J-STD-020, LF maximum peak M3 of 260 °C.
AEC-Q101 qualified available: - Automotive ordering code: base P/NHM3.
Material categorization: for definitions of compliance please see www. vishay. com/doc?99912 LI.

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Published: Jun 8, 2020 |