Datasheet Specifications
- Part number
- V12W60C-M3
- Manufacturer
- Vishay ↗
- File Size
- 118.92 KB
- Datasheet
- V12W60C-M3-Vishay.pdf
- Description
- Dual Trench MOS Barrier Schottky Rectifier
Description
www.vishay.com V12W60C-M3 Vishay General Semiconductor Dual Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.38 V at IF = 3 A TMBS® TO-252 (D.Features
* Trench MOS Schottky technologyApplications
* For use in high frequency DC/DC converters, switching power supplies, freewheeling diodes, OR-ing diode, and reverse battery protection. PRIMARY CHARACTERISTICS IF(AV) VRRM IFSM VF at IF = 6 A (TA = 125 °C) TJ max. Package 2x6A 60 V 90 A 0.47 V 150 °C TO-252 (D-PAK) Diode variation Dual commonV12W60C-M3 Distributors
📁 Related Datasheet
📌 All Tags