TSPF6200 High Power Infrared Emitting Diode

Vishay

Description

End of Life - Last Available Purchase Date: 31-December-2021 www.vishay.com TSPF6200 Vishay Semiconductors High Power Infrared Emitting Diode, 890 .
TSPF6200 is an infrared, 890 nm emitting diode in GaAlAs / double hetero (DH) technology with high radiant power, high speed, and with typical receivi.

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Datasheet Specifications

Part number: TSPF6200
Manufacturer: Vishay ↗
File Size: 110.31 KB
Datasheet: TSPF6200-Vishay.pdf
Description: High Power Infrared Emitting Diode

Features

* Package type: leaded
* Package form: T-1¾
* Dimensions (in mm): Ø 5
* Peak wavelength: λp = 890 nm
* High reliability
* High radiant power
* High radiant intensity
* Angle of half intensity: ϕ = ± 22°
* Low forward voltage

Applications

* Metering systems PRODUCT SUMMARY COMPONENT Ie (mW/sr) ϕ (°) TSPF6200 55 ± 22 Note
* Test conditions see table “Basic Characteristics” λp (nm) 890 tr (ns) 50 ORDERING INFORMATION ORDERING CODE TSPF6200 Note
* MOQ: minimum order quantity PACKAGING Bulk REMARKS MO

TSPF6200 Distributors

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TSPF6200 High Power Infrared Emitting Diode Vishay

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