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SiZF640DT
Vishay Siliconix
Symmetric Dual N-Channel 40 V (D-S) MOSFET
PowerPAIR® 6 x 5FS
G2 - D2 S1 -D2 S1 -D2
S1
6 mm 1 5 mm
Top View
8 7 6 5
S2 (Pin
9)
D1
1
4
3
2 G1 GR
D1
D1
Bottom View
PRODUCT SUMMARY
VDS (V) RDS(on) max. () at VGS = 10 V RDS(on) max. () at VGS = 4.5 V Qg typ. (nC) ID (A) a Configuration
40 0.00137 0.00240
30 159 Dual
FEATURES • TrenchFET® Gen IV power MOSFET • 100 % Rg and UIS tested • Symmetric dual N-channel • Flip chip technology optimal thermal design • High side and low side MOSFETs form optimized
combination for 50 % duty cycle • Material categorization: for definitions of compliance
please see www.vishay.
SiZF640DT Datasheet
