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SiJ4108DP - N-Channel MOSFET

Features

  • TrenchFET® Gen IV power MOSFET.
  • Very low Qg and Qoss reduce power loss and improve efficiency.
  • Flexible leads provide resilience to mechanical stress.
  • 100 % Rg and UIS tested.
  • Qgd/Qgs ratio < 1 optimizes switching characteristics.
  • Material categorization: for definitions of compliance please see www. vishay. com/doc?99912.

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Datasheet Details

Part number SiJ4108DP
Manufacturer Vishay
File Size 190.61 KB
Description N-Channel MOSFET
Datasheet download datasheet SiJ4108DP Datasheet

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Full PDF Text Transcription

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www.vishay.com SiJ4108DP Vishay Siliconix N-Channel 100 V (D-S) MOSFET PowerPAK® SO-8L Single 6.15 mm 1 5.13 mm Top View PRODUCT SUMMARY VDS (V) RDS(on) max. () at VGS = 10 V RDS(on) max. () at VGS = 7.5 V Qg typ. (nC) ID (A) a Configuration D 1 2S 3S 4S G Bottom View 100 0.009 0.0106 26.5 56.7 Single FEATURES • TrenchFET® Gen IV power MOSFET • Very low Qg and Qoss reduce power loss and improve efficiency • Flexible leads provide resilience to mechanical stress • 100 % Rg and UIS tested • Qgd/Qgs ratio < 1 optimizes switching characteristics • Material categorization: for definitions of compliance please see www.vishay.
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