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SiHH11N65E - E Series Power MOSFET

Features

  • Low figure-of-merit (FOM) Ron x Qg.
  • Low input capacitance (Ciss).
  • Reduced switching and conduction losses.
  • Ultra low gate charge (Qg).
  • Avalanche energy rated (UIS).
  • Kelvin connection for reduced gate noise.
  • Material categorization: for definitions of compliance please see www. vishay. com/doc?99912.

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Datasheet Details

Part number SiHH11N65E
Manufacturer Vishay
File Size 196.06 KB
Description E Series Power MOSFET
Datasheet download datasheet SiHH11N65E Datasheet

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Full PDF Text Transcription

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www.vishay.com SiHH11N65E Vishay Siliconix E Series Power MOSFET PRODUCT SUMMARY VDS (V) at TJ max. RDS(on) typ. () at 25 °C Qg max. (nC) Qgs (nC) Qgd (nC) Configuration 700 VGS = 10 V 68 9 15 Single 0.316 PowerPAK® 8 x 8 Pin 4 4 1 2 3 3 Pin 1 Pin 2 Pin 3 N-Channel MOSFET FEATURES • Low figure-of-merit (FOM) Ron x Qg • Low input capacitance (Ciss) • Reduced switching and conduction losses • Ultra low gate charge (Qg) • Avalanche energy rated (UIS) • Kelvin connection for reduced gate noise • Material categorization: for definitions of compliance please see www.vishay.
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