Description
Third generation power MOSFETs from Vishay utilize advanced processing techniques to achieve extremely low on resistance per silicon area.
Features
- Advanced process technology.
- Surface-mount (IRFZ14S, SiHFZ14S).
- Low profile through-hole (SiHFZ14L).
- 175 °C operating temperature
Available.
- Fast switching
Available.
- Material categorization: for definitions of
compliance please see www. vishay. com/doc?99912
Note.
- This datasheet provides information about parts that are
RoHS-compliant and / or parts that are non RoHS-compliant. For example, parts with lead (Pb) terminations a.
SiHFZ14S-Vishay.pdf
