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SiHF9Z20 - Power MOSFET

Description

The power MOSFET technology is the key to Vishay’s advanced line of power MOSFET transistors.

The efficient geometry and unique processing of the power MOSFET design achieve very low on-state resistance combined with high transconductance and extreme device ruggedness.

Features

  • P-channel versatility.
  • Compact plastic package.
  • Fast switching.
  • Low drive current.
  • Ease of paralleling.
  • Excellent temperature stability.
  • Material categorization: for definitions of compliance please see www. vishay. com/doc?99912.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.vishay.com IRF9Z20, SiHF9Z20 Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () Qg max. (nC) Qgs (nC) Qgd (nC) Configuration -50 VGS = -10 V 26 6.2 8.6 Single 0.28 TO-220AB S G S D G D P-Channel MOSFET FEATURES • P-channel versatility • Compact plastic package • Fast switching • Low drive current • Ease of paralleling • Excellent temperature stability • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 DESCRIPTION The power MOSFET technology is the key to Vishay’s advanced line of power MOSFET transistors. The efficient geometry and unique processing of the power MOSFET design achieve very low on-state resistance combined with high transconductance and extreme device ruggedness.
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