Si7111EDN - P-Channel 30 V (D-S) MOSFET

Vishay

Datasheet Details

TrenchFET® Gen III p-channel power MOSFET.
RDS(on) rating at VGS = -2.5 V.
100 % Rg and UIS tested.
Typical ESD protection: 4600 V HBM.
Material categorization: for definitions of compliance please see www. vishay. com/doc?99912.

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Published: Feb 10, 2017 |