Datasheet4U Logo Datasheet4U.com

SIHG16N50C - Power MOSFET

Features

  • Low Figure-of-Merit Ron x Qg 0.38.
  • 100 % Avalanche Tested.
  • Gate Charge Improved.
  • Trr/Qrr Improved.
  • Compliant to RoHS Directive 2002/95/EC TO-247AC G S D G S N-Channel MOSFET.

📥 Download Datasheet

Full PDF Text Transcription

Click to expand full text
SiHG16N50C Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) at TJ max. RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration 560 V VGS = 10 V 68 17.6 21.8 Single D FEATURES • Low Figure-of-Merit Ron x Qg 0.
Published: |