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SIA918EDJ - MOSFET

Features

  • TrenchFET® power MOSFET.
  • Thermally enhanced PowerPAK® SC-70 package - Small footprint area - Low on-resistance.
  • Typical ESD protection: 1000 V (HBM).
  • 100 % Rg tested.
  • Material categorization: for definitions of compliance please see www. vishay. com/doc?99912.

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Full PDF Text Transcription

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www.vishay.com SiA918EDJ Vishay Siliconix Dual N-Channel 30 V (D-S) MOSFET PRODUCT SUMMARY VDS (V) 30 RDS(on) () MAX. 0.058 at VGS = 4.5 V 0.065 at VGS = 2.5 V 0.077 at VGS = 1.8 V ID (A) 4.5 a 4.5 a 4.5 a Qg (TYP.) 3.6 nC PowerPAK® SC-70-6L Dual D1 G2 6 S2 5 4 D2 D1 2.05 mm 1 2.05 mm Top View 2 3 G1 D2 Bottom View 1 S1 Marking Code: CL Ordering Information: SiA918EDJ-T1-GE3 (lead (Pb)-free and halogen free) FEATURES • TrenchFET® power MOSFET • Thermally enhanced PowerPAK® SC-70 package - Small footprint area - Low on-resistance • Typical ESD protection: 1000 V (HBM) • 100 % Rg tested • Material categorization: for definitions of compliance please see www.vishay.
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