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SIA477EDJT - MOSFET

Features

  • TrenchFET® Gen III p-channel power MOSFET.
  • Thermally enhanced PowerPAK® SC-70 package - Small footprint area - Low on-resistance.
  • 100 % Rg tested.
  • RDS(on) rating at VGS = -1.8 V.
  • Built in ESD protection with Zener diode.
  • Typical ESD performance: 3500 V.
  • Material categorization: for definitions of compliance please see www. vishay. com/doc?99912.

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Full PDF Text Transcription

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www.vishay.com SiA477EDJT Vishay Siliconix P-Channel 12 V (D-S) MOSFET Thin PowerPAK® SC-70-6L Single D D6 S5 4 2.05 mm 0.6 mm 1 2.05 mm Top View PRODUCT SUMMARY VDS (V) RDS(on) max. () at VGS = -4,5 V RDS(on) max. () at VGS = -3.7 V RDS(on) max. () at VGS = -2.5 V RDS(on) max. () at VGS = -1.8 V Qg typ. (nC) ID (A) Configuration S 72 3D G Bottom View 1 D -12 0.0130 0.0145 0.0190 0.0320 33 -12 Single FEATURES • TrenchFET® Gen III p-channel power MOSFET • Thermally enhanced PowerPAK® SC-70 package - Small footprint area - Low on-resistance • 100 % Rg tested • RDS(on) rating at VGS = -1.8 V • Built in ESD protection with Zener diode • Typical ESD performance: 3500 V • Material categorization: for definitions of compliance please see www.vishay.
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