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P-Channel 2.5-V (G-S) MOSFET
Si4463BDY
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
0.011 at VGS = - 10 V
- 20
0.014 at VGS = - 4.5 V
0.020 at VGS = - 2.5 V
ID (A) - 13.7 - 12.3 - 10.3
FEATURES
• Halogen-free According to IEC 61249-2-21 Available
• TrenchFET® Power MOSFETs
SO-8
S1 S2 S3 G4
8D 7D 6D 5D
Top View
Ordering Information: Si4463BDY-T1-E3 (Lead (Pb)-free) Si4463BDY-T1-GE3 (Lead (Pb)-free and Halogen-free)
S G
D P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
10 s
Steady State
Unit
Drain-Source Voltage Gate-Source Voltage
VDS
- 20
V
VGS
± 12
Continuous Drain Current (TJ = 150 °C)a Pulsed Drain Current
TA = 25 °C TA = 70 °C
ID
- 13.7 - 11.1
- 9.8 - 7.
SI4463BDY Datasheet
